StudiesLehrveranstaltungen
Power Semiconductors and Gate Drives

Power Semiconductors and Gate Drives

Lecture + Exercise + Laboratory

Learning target:

Comprehension of the relation between the structural design of power semiconductor components and their performance characteristics. Based on this, the influence of the load to be switched, of the gate drive and of the circuit environment on the performance of power semiconductors shall be pointed out by means of examples.

Contents:

  • Repetition of the basics of semiconductors
  • p-s-n-junction
  • Space charge region and blocking behaviour; junction capacitance

  • Conduction behaviour; stored charge in case of bipolar components
  • Relation between the geometric parameters and the electrical limits
  • Dynamic behaviour when switching on and off
  • Bipolar transistor
  • Thyristor
  • Structure of modern MOSFETs and IGBTs
  • Gate drive and switching performance of MOSFETs, IGBTs and IGCTs
  • Integrated gate drive circuits

 

The exercise is partly accompanied by practical experiments.Die Übung wird. z.T. von praktischen Experimenten begleitet.


CONTACT

Prof. Dr.-Ing. Axel Mertens